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參數(shù)資料
| 型號： | 934054150215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 15/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 934054150215 |
1997 Dec 02
8
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
Fig.16 Gain test circuit.
VDS = 5 V, GS= 2 mS, GL = 0.5 mS, f = 200 MHz.
L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire.
L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set GL = 0.5 mS.
C1 adjusted for GS = 2 mS.
handbook, full pagewidth
BF1105
BF1105R
BF1105WR
MGM255
330 k
47 k
15
pF
5.5 pF
C1
1 nF
VAGC
VDS
G1
G2
S
D
1 nF
330 k
1 nF
BB405
10 pF
BB405
input
50
Vtun input
output
50
Vtun output
L2
L1
2
H
Fig.17 Gain test circuit.
VDS = 5 V, GS= 3.3 mS, GL = 1 mS, f = 800 MHz.
L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH.
handbook, full pagewidth
input
50
output
50
BF1105
BF1105R
BF1105WR
MGM256
47 k
0.5 to 3.5 pF
1 nF
L3
L2
L1
1 nF
VAGC
VDS
G1
G2
S
D
,,,
2 to 18 pF
4 to 40 pF
,,,,
0.5 to 3.5 pF
1 nF
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