- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24699 > 934055563118 (NXP SEMICONDUCTORS) 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH PDF資料下載
參數(shù)資料
| 型號： | 934055563118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封裝： | PLASTIC, SSOP-28 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 210K |
| 代理商： | 934055563118 |
Philips Semiconductors
Product specification
N-channel enhancement mode
PHN70308
TrenchMOS transistor array
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
T
j = 25 C to 150C
-
25
V
DGR
Drain-gate voltage
R
GS = 20 k
-25
V
GS
Gate-source voltage
-
± 20
V
I
D
Peak drain current per device
T
sp = 50 C
1
(continuous operation)
spindle FETs;
δ = 33.3%
-
5
A
Isolation FET (dc)
-
5
A
I
DM
Peak current per device (pulse
spindle FETs
-
20
A
peak value)
isolation FET
-
20
A
P
tot
Power dissipation per device
2
T
sp = 50 C
spindle FETs;
δ = 33.3%
-
1.13
W
isolation FET (dc)
-
1.275
W
P
tot
Total power dissipation in normal
T
sp = 50 C
-
8
W
operation
2
spindle FETs;
δ = 33.3%
isolation FET (dc)
T
stg, Tj
Storage & operating temperature
- 55
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance junction to
isolation FET
20
-
K/W
solder point
spindle FET
43
-
K/W
R
th j-a
Thermal resistance junction to
device soldered to FR4 board,
ambient
minimum footprint.
isolation FET
85
-
K/W
spindle FET
100
-
K/W
1 T
sp is the temperature at the soldering point of the drain leads.
2 In normal operation, the isolation FET conducts continuously whilst each of the spindle FETs conducts for 33.3%
of the time. The dissipation in the isolation transistor is given by:-
The dissipation in each of the spindle transistors is given by:-
The total dissipation under these conditions is given by:-
With the motor being driven at 5 A and assuming T
j = 150C, the total dissipation is:-
Switching losses are assumed to be negligible.
P
isolation = I
2xR
DS
(ON)(isolationFET)
P
spindle = 0.333xI
2xR
DS
(ON)(spindleFET)
P
tot = Pisolation + 6xPspindle
P
tot = 25x 0.03x 1.7 + 0.333x 25x 0.08x 1.7x 6 = 8W
May 1999
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934055567112 | 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 05W580EWC | LED SPECIFICATION |
| 934055571215 | 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 934055572412 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 934055576127 | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。