- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24699 > 934055563118 (NXP SEMICONDUCTORS) 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH PDF資料下載
參數(shù)資料
| 型號(hào)： | 934055563118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封裝： | PLASTIC, SSOP-28 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 210K |
| 代理商： | 934055563118 |
Philips Semiconductors
Product specification
N-channel enhancement mode
PHN70308
TrenchMOS transistor array
Fig.5. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C
Fig.6. Safe operating area (spindle FET) T
sp = 25C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.7. Safe operating area (isolation FET) T
sp = 25C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.8. Transient thermal impedance (spindle FET).
Z
th j-sp = f(t); parameter D = tp/T
Fig.9. Transient thermal impedance (isolation FET).
Z
th j-sp = f(t); parameter D = tp/T
Fig.10. Typical output characteristics (spindle FET)
T
j = 25 C; ID = f(VDS); parameter VGS
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
minimum
typical
VDS = 5 V
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 100 us
0
1
2
3
4
5
6
7
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
2.6 V
2.8 V
Tj = 25 C
VGS = 10 V
3 V
3.2 V
4.5 V
3.4 V
3.6 V
May 1999
5
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934055567112 | 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 05W580EWC | LED SPECIFICATION |
| 934055571215 | 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 934055572412 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 934055576127 | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。