參數(shù)資料
型號(hào): 934055571215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù): 1/13頁
文件大小: 318K
代理商: 934055571215
BSH108
N-channel enhancement mode eld-effect transistor
Rev. 02 — 25 October 2000
Product specication
c
M3D088
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
BSH108 in SOT23.
2.
Features
s TrenchMOS technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3.
Applications
s Battery management
s High speed switch
s Low power DC to DC converter.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT23, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT23
2
source (s)
3
drain (d)
MSB003
Top view
12
3
s
d
g
MBB076
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