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參數(shù)資料
| 型號(hào)： | 934055563118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封裝： | PLASTIC, SSOP-28 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 210K |
| 代理商： | 934055563118 |
Philips Semiconductors
Product specification
N-channel enhancement mode
PHN70308
TrenchMOS transistor array
Fig.11. Typical output characteristics (isolation FET)
T
j = 25 C; ID = f(VDS); parameter VGS
Fig.12. Typical on-state resistance (spindle FET)
T
j = 25 C; RDS(ON) = f(ID); parameter VGS
Fig.13. Typical on-state resistance (isolation FET)
T
j = 25 C; RDS(ON) = f(ID); parameter VGS
Fig.14. Typical transfer characteristics (spindle FET)
I
D = f(VGS)
Fig.15. Typical transfer characteristics
(isolation FET); I
D = f(VGS)
Fig.16. Typical transconductance (spindle FET)
T
j = 25 C; gfs = f(ID)
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
2.6 V
2.8 V
Tj = 25 C
VGS = 4.5 V
3 V
3.2 V
10 V
3.6 V
3.4 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
150 C
0
0.1
0.2
0.3
0.4
0.5
01
234
56
78
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =4.5 V
10V
Tj = 25 C
3.4V
3.6 V
3.2 V
2.8 V
3 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
150 C
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0123456789
10
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =4.5 V
10V
Tj = 25 C
3.4V
3.6 V
3.2 V
3 V
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID X RDS(ON)
May 1999
6
Rev 1.000
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