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參數(shù)資料
| 型號： | 934055567112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 934055567112 |
2001 Oct 30
3
Philips Semiconductors
Product specication
860 MHz, 18.5 dB gain power doubler amplier
BGD902L
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75 .
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18.2
18.5
18.8
dB
f = 900 MHz
19
19.5
20
dB
SL
slope straight line
f = 40 to 900 MHz
0.4
0.9
1.4
dB
FL
atness straight line
f = 40 to 900 MHz
±0.15
±0.3
dB
S11
input return losses
f = 40 to 80 MHz
21
24
dB
f = 80 to 160 MHz
22
26
dB
f = 160 to 320 MHz
22
28
dB
f = 320 to 650 MHz
19
22
dB
f = 650 to 900 MHz
18
21
dB
S22
output return losses
f = 40 to 80 MHz
25
32
dB
f = 80 to 160 MHz
25
33
dB
f = 160 to 320 MHz
21
29
dB
f = 320 to 750 MHz
20
22
dB
f = 750 to 900 MHz
19
22
dB
S21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
49 channels at; Vo = 47 dBmV;
fm = 859.25 MHz
66.5
65
dB
77 channels at; Vo = 44 dBmV;
fm = 547.25 MHz
68
66
dB
110 channels at; Vo = 44 dBmV;
fm = 745.25 MHz
61.5
60
dB
129 channels at; Vo = 44 dBmV;
fm = 859.25 MHz
58
56
dB
110 channels; fm = 445.25 MHz;
Vo = 49 dBmV at 550 MHz; note 1
62
60
dB
129 channels; fm = 697.25 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
56
53.5
dB
Xmod
cross modulation
49 channels at; Vo = 47 dBmV;
fm = 55.25 MHz
64.5
62
dB
77 channels at; Vo = 44 dBmV;
fm = 55.25 MHz
67.5
65
dB
110 channels at; Vo = 44 dBmV;
fm = 55.25 MHz
64
61.5
dB
129 channels at; Vo = 44 dBmV;
fm = 55.25 MHz
62.5
60
dB
110 channels; fm = 55.25 MHz;
Vo = 49 dBmV at 550 MHz; note 1
60.5
58
dB
129 channels; fm = 859.25 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
58
dB
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