參數(shù)資料
型號: 934055567112
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: SOT-115J, 7 PIN
文件頁數(shù): 7/12頁
文件大?。?/td> 76K
代理商: 934055567112
2001 Oct 30
4
Philips Semiconductors
Product specication
860 MHz, 18.5 dB gain power doubler amplier
BGD902L
Notes
1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at
6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp +fq = 860.5 MHz.
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp +fq = 746.5 MHz.
5. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp +fq = 548.5 MHz.
6. Measured according to DIN45004B:
fp = 851.25 MHz; Vp =Vo; fq = 858.25 MHz; Vq =Vo 6 dB; fr = 860.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 849.25 MHz.
7. Measured according to DIN45004B:
fp = 740.25 MHz; Vp =Vo; fq = 747.25 MHz; Vq =Vo 6 dB; fr = 749.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 738.25 MHz.
8. Measured according to DIN45004B:
fp = 540.25 MHz; Vp =Vo; fq = 547.25 MHz; Vq =Vo 6 dB; fr = 549.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 538.25 MHz.
9. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
CSO
composite second order
distortion
49 channels at; Vo = 47 dBmV;
fm = 860.5 MHz
66
63
dB
77 channels at; Vo = 44 dBmV;
fm = 548.5 MHz
71
66
dB
110 channels at; Vo = 44 dBmV;
fm = 746.5 MHz
65
60
dB
129 channels at; Vo = 44 dBmV;
fm = 860.5 MHz
62
59
dB
110 channels; fm = 246 MHz;
Vo = 49 dBmV at 550 MHz; note 1
69
64
dB
129 channels; fm = 246 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
64
59
dB
d2
second order distortion
note 3
80
74
dB
note 4
83
77
dB
note 5
84
78
dB
Vo
output voltage
dim = 60 dB; note 6
63
64.5
dBmV
dim = 60 dB; note 7
64
65.5
dBmV
dim = 60 dB; note 8
66
67.5
dBmV
CTB compression=1dB;
129 channels at; f = 859.25 MHz
47
48
dBmV
CSO compression = 1 dB;
129 channels at; f = 860.5 MHz
49.5
51.5
dBmV
NF
noise gure
f = 50 MHz
45dB
f = 550 MHz
4.3
5.5
dB
f = 750 MHz
5
6.5
dB
f = 900 MHz
6
7.5
dB
Itot
total current consumption (DC)
note 9
350
365
380
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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