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參數(shù)資料
| 型號： | 934055571215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 318K |
| 代理商： | 934055571215 |
Philips Semiconductors
BSH108
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 25 October 2000
2 of 13
9397 750 07652
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
ID
drain current (DC)
Tsp =25 °C; VGS =5V
1.9
A
Ptot
total power dissipation
Tsp =25 °C
0.83
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 1 A
77
120
m
VGS =5V; ID = 1 A
102
140
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
30
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
1.9
A
1.2
A
IDM
peak drain current
7.5
A
Ptot
total power dissipation
0.83
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
0.83
A
ISM
peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 s
3.3
A
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