參數(shù)資料
型號(hào)： 934055571215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù)： 10/13頁
文件大?。?/td> 318K
代理商： 934055571215
Philips Semiconductors
BSH108
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 25 October 2000
6 of 13
9397 750 07652
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa81
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VDS (V)
ID
(A)
3 V
2 V
2.2 V
2.4 V
2.6 V
VGS = 2.8 V
3.4 V
Tj = 25 oC
5 V
10 V
03aa83
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
VGS (V)
ID
(A)
VDS > ID X RDSon
Tj = 25
oC
150 oC
03aa82
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
ID (A)
RDSon
(
)
VGS = 10 V
Tj = 25
oC
3 V
5 V
2.2 V
2.4 V
2.6 V
2.8 V
3.4 V
03aa27
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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