參數(shù)資料
型號(hào)： 934055571215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： PLASTIC, SMD, SST3, 3 PIN
文件頁(yè)數(shù)： 9/13頁(yè)
文件大?。?/td> 318K
代理商： 934055571215
Philips Semiconductors
BSH108
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 25 October 2000
5 of 13
9397 750 07652
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID =10 A; VGS =0V
Tj =25 °C30
40
V
Tj = 55 °C27
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 150 °C
0.5
V
Tj = 55 °C
3.2
V
IDSS
drain-source leakage current
VDS =24V; VGS =0V
Tj =25 °C
0.01
1.0
A
Tj = 150 °C
10
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID =1A; Figure 7 and 8
Tj =25 °C
77
120
m
VGS =5V; ID =1A; Figure 7 and 8
Tj =25 °C
102
140
m
Tj = 150 °C
170
240
m
Dynamic characteristics
gfs
forward transconductance
VDS =10V; ID =1A; Figure 11
2
4.5
S
Qg(tot)
total gate charge
VDD =15V; VGS =10V; ID =5A; Figure 14
6.4
10
nC
Qgs
gate-source charge
0.5
nC
Qgd
gate-drain (Miller) charge
1.3
nC
Ciss
input capacitance
VGS =0V; VDS = 10 V; f = 1 MHz; Figure 12
190
pF
Coss
output capacitance
70
pF
Crss
reverse transfer capacitance
50
pF
td(on)
turn-on delay time
VDD =10V; RL =10 ; VGS =10V; RG =6
3
ns
tr
rise time
8
ns
td(off)
turn-off delay time
15
ns
tf
fall time
26
ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 0.83 A; VGS =0V; Figure 13
0.8
1.2
V
trr
reverse recovery time
IS = 1 A; dIS/dt = 100 A/s; VGS =0V;
VDS =25V
25
ns
Qr
recovered charge
20
nC
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