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參數(shù)資料
| 型號： | 934056035235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 290K |
| 代理商： | 934056035235 |
Philips Semiconductors
BSH112
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 25 August 2000
3 of 13
9397 750 07305
Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
Tsp (
o
C)
(%)
03aa25
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
sp
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03aa40
10-2
10-1
1
10
110
102
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon =VDS/ID
1ms
tp =10 s
100 s
Tsp =25oC
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