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參數(shù)資料
| 型號： | 934056035235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 290K |
| 代理商： | 934056035235 |
Philips Semiconductors
BSH112
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 25 August 2000
6 of 13
9397 750 07305
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa41
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VDS (V)
ID
(A)
3.5 V
Tj = 25oC
VGS = 10V
4 V
4.5 V
3 V
03aa43
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
012
34567
89
10
VGS (V)
ID
(A)
VDS > ID X RDSon
Tj = 25
oC
150oC
03aa42
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
ID (A)
RDSon
(
)
VGS = 10V
Tj = 25
oC
4.5 V
4 V
3.5V
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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