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參數(shù)資料
| 型號： | 934056035235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 290K |
| 代理商： | 934056035235 |
Philips Semiconductors
BSH112
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 25 August 2000
8 of 13
9397 750 07305
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °C and 150 °C; VGS =0V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
03aa45
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD (V)
IS
(A)
Tj = 25
oC
150oC
VGS = 0 V
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