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| 型號(hào)： | 934056035235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 8/13頁 |
| 文件大小： | 290K |
| 代理商： | 934056035235 |
Philips Semiconductors
BSH112
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 25 August 2000
4 of 13
9397 750 07305
Philips Electronics N.V. 2000. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-sp)
thermal resistance from junction to solder
point
mounted on a metal clad substrate;
150
K/W
Rth(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
350
K/W
Mounted on a metal clad substrate.
Fig 4.
Transient thermal impedance from junction to solder point as a function of
pulse duration.
03aa39
1
10
102
103
10-5
10-4
10-3
10-2
10-1
110
tp (s)
Zth(j-sp)
(K/W)
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
tp
T
P
t
T
δ =
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