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| 型號(hào)： | 934056038118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 347K |
| 代理商： | 934056038118 |
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Philips Semiconductors
PHN103T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 28 August 2000
5 of 13
9397 750 07304
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID =10 A; VGS =0V
Tj =25 °C30
43
V
Tj = 55 °C27
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
2
2.8
V
Tj = 150 °C
0.6
V
Tj = 55 °C
3.5
V
IDSS
drain-source leakage current
VDS = 24 V; VGS =0V
Tj =25 °C
10
100
nA
Tj = 150 °C
10
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
10
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =5A;
Tj =25 °C
20
30
m
VGS =5V; ID = 2.5 A;
Tj =25 °C
30
50
m
Tj = 150 °C
85
m
Dynamic characteristics
gfs
forward transconductance
VDS =5V; ID = 5.5 A;
12
S
Qg(tot)
total gate charge
ID = 5 A; VDS =15V;
24
40
nC
Qgs
gate-source charge
3.3
nC
Qgd
gate-drain (Miller) charge
7.4
nC
Ciss
input capacitance
VGS =0V; VDS =24V;
f = 1 MHz; Figure 12
770
pF
Coss
output capacitance
265
pF
Crss
reverse transfer capacitance
180
pF
td(on)
turn-on delay time
VDD = 15 V; RD =15 ;
VGS =10V; RG =6
8
ns
tr
turn-on rise time
10
ns
ton
turn-on time
18
35
ns
td(off)
turn-off delay time
24
ns
tf
turn-off fall time
20
ns
toff
turn-off time
44
150
ns
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