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參數(shù)資料
| 型號(hào)： | 934056038118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 347K |
| 代理商： | 934056038118 |
Philips Semiconductors
PHN103T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 28 August 2000
8 of 13
9397 750 07304
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °C and 150 °C; VGS =0V
ID = 5 A; VDS =15V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ac29
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1
1.2
VSD (V)
IS
(A)
Tj=25oC
150oC
VGS =0V
03ac31
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
QG (nC)
VGS
(V)
ID = 5 A
Tj = 25
oC
VDS = 15 V
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