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參數(shù)資料
| 型號： | 934056038118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 347K |
| 代理商： | 934056038118 |
Philips Semiconductors
PHN103T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 28 August 2000
2 of 13
9397 750 07304
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
ID
drain current (DC)
Tsp =25 °C; VGS = 4.5 V
8.6
A
Ptot
total power dissipation
Tsp =25 °C
6.25
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 5 A
2030m
VGS = 4.5 V; ID = 2.5 A
3050m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
30
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tsp =25 °C; VGS = 4.5 V;
8.6
A
5.4
A
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 s;
34
A
Ptot
total power dissipation
6.25
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
7A
ISM
peak source (diode forward) current
Tsp =25 °C; pulsed; tp ≤ 10 s
34
A
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