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參數(shù)資料
| 型號(hào)： | 934056038118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 11/13頁(yè) |
| 文件大小： | 347K |
| 代理商： | 934056038118 |
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Philips Semiconductors
PHN103T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 28 August 2000
7 of 13
9397 750 07304
Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa34
0
0.5
1
1.5
2
2.5
3
-60
-20
20
60
100
140
180
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa37
0
0.5
1
1.5
2
2.5
3
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03ac28
0
2
4
6
8
10
12
14
16
0
2
4
6
8
1012 1416 1820
ID (A)
gfs
(S)
Tj =25oC
150oC
VDS >ID XRDSon
03ac30
102
103
104
10-1
110
102
VDS (V)
Ciss, Coss,
Crss (pF)
Ciss
Coss
Crss
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