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參數(shù)資料
| 型號： | 934056038118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 347K |
| 代理商： | 934056038118 |
Philips Semiconductors
PHN103T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 28 August 2000
6 of 13
9397 750 07304
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 1.25 A; VGS =0V;
0.73
1.0
V
trr
reverse recovery time
IS = 1.25 A;
dIS/dt = 100 A/s;
VGS =0V; VDS =25V
120
ns
Qr
recovered charge
150
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ac25
0
2
4
6
8
10
12
14
16
18
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
ID
(A)
2.8 V
Tj =25
oC
VGS =5V
3V
10 V
3.2 V
2.6 V
3.4 V
03ac27
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS (V)
ID
(A)
VDS >ID XRDSon
Tj =25oC
150oC
03ac26
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
2
4
6
8
10 12 14 16 18 20
ID (A)
RDSon
()
VGS = 10V
Tj =25oC
5V
3.4 V
3.2 V
2.8V 3V
03aa27
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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