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| 型號(hào)： | 934056349127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | 934056349127 |
Philips Semiconductors
PHU11NQ10T
TrenchMOS standard level FET
Product data
Rev. 01 — 28 May 2002
7 of 12
9397 750 09528
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS =0V;f=1MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aj02
0
1
2
3
4
5
-60
0
60
120
180
Tj (°C)
VGS(th)
(V)
min
typ
max
03aj01
10-6
10-5
10-4
10-3
10-2
10-1
01
23
45
VGS(V)
ID
(A)
typ
max
min
03ai99
10
102
103
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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