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參數(shù)資料
| 型號： | 934056349127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 248K |
| 代理商： | 934056349127 |
Philips Semiconductors
PHU11NQ10T
TrenchMOS standard level FET
Product data
Rev. 01 — 28 May 2002
8 of 12
9397 750 09528
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °C and 175 °C; VGS =0V
ID = 11 A; VDD = 20 V, 50 V, 80 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ai98
0
4
8
12
16
0
0.4
0.8
1.2
1.6
VSD (V)
IS
(A)
Tj = 25 °C
175
°C
VGS = 0 V
03aj00
0
2
4
6
8
10
0
5
10
15
QG (nC)
VGS
(V)
ID = 11 A
Tj = 25 °C
VDD = 20 V
50 V
80 V
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