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參數(shù)資料
| 型號(hào)： | 934056349127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 248K |
| 代理商： | 934056349127 |
Philips Semiconductors
PHU11NQ10T
TrenchMOS standard level FET
Product data
Rev. 01 — 28 May 2002
5 of 12
9397 750 09528
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS =0V; ID = 250 A
Tj =25 °C
100
130
-
V
Tj = 55 °C
89
--V
VGS(th)
gate-source threshold voltage
Tj =25 °C
134V
Tj = 175 °C
0.6
-
V
Tj = 55 °C
-
4.6
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
10
500
A
IGSS
gate-source leakage current
VDS =0V; VGS = ±10 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
150
180
m
Tj = 175 °C
-
485
m
Dynamic characteristics
Qg(tot)
total gate charge
-
14.7
-
nC
Qgs
gate-source charge
-
2.3
-
nC
Qgd
gate-drain (Miller) charge
-
5.3
-
nC
Ciss
input capacitance
-
360
-
pF
Coss
output capacitance
-
60
-
pF
Crss
reverse transfer capacitance
-
40
-
pF
td(on)
turn-on delay time
VDD =50V; RD = 4.7 ;
VGS =10V;RG = 5.6
-
5.5
-
ns
tr
rise time
-23
-
ns
td(off)
turn-off delay time
-
11.5
-
ns
tf
fall time
-
7.2
-
ns
Source-drain diode
VSD
-
1
1.5
V
trr
reverse recovery time
IS = 4 A; dIS/dt = 100 A/s; VGS = 0 V
-
55
-
ns
Qr
recovered charge
-
85
-
nC
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