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參數(shù)資料
| 型號(hào)： | 934056349127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | 934056349127 |
Philips Semiconductors
PHU11NQ10T
TrenchMOS standard level FET
Product data
Rev. 01 — 28 May 2002
6 of 12
9397 750 09528
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ai95
0
4
8
12
16
0246
VDS (V)
ID
(A)
6.5 V
Tj = 25 °C
VGS = 4.5 V
10 V
6 V
5.5 V
5 V
7 V
03ai97
0
4
8
12
16
024
68
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 °C
175
°C
03ai96
0
0.1
0.2
0.3
048
12
16
ID (A)
RDSon
(
)
7 V
VGS = 5 V
Tj = 25 °C
5.5 V
10 V
6 V
03aa29
0
1
2
3
-60
0
60
120
180
Tj (
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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