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參數(shù)資料
| 型號(hào)： | 934056349127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | 934056349127 |
Philips Semiconductors
PHU11NQ10T
TrenchMOS standard level FET
Product data
Rev. 01 — 28 May 2002
3 of 12
9397 750 09528
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse; VGS = 10V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (°C)
Pder
(%)
03aa24
0
40
80
120
0
50
100
150
200
Tmb (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ai94
10-1
1
10
102
1
10
102
103
VDS (V)
ID
(A)
DC
Limit RDSon = VDS / ID
1 ms
tp = 10 s
100 s
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