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參數(shù)資料
| 型號： | 934056349127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 248K |
| 代理商： | 934056349127 |
Philips Semiconductors
PHU11NQ10T
TrenchMOS standard level FET
Product data
Rev. 01 — 28 May 2002
2 of 12
9397 750 09528
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 175 °C
-
100
V
ID
drain current (DC)
Tmb =25 °C; VGS = 10 V
-
10.9
A
Ptot
total power dissipation
Tmb =25 °C
-
57.7
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 9 A; Tj =25 °C
150
180
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage (DC)
25
°C ≤ Tj ≤ 175 °C; RGS =20k
-
100
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
-
10.9
A
-
7.7
A
IDM
peak drain current
-
43.6
A
Ptot
total power dissipation
-
57.7
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
10.9
A
ISM
peak source (diode forward) current Tmb =25 °C; tp ≤ 10 s
-
43.6
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 3.2 A;
tp = 0.2 ms; VDD ≤ 15 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C
-35
mJ
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