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參數(shù)資料
| 型號： | 934056506215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 276K |
| 代理商： | 934056506215 |
Philips Semiconductors
BSH114
N-channel enhancement mode eld effect transistor
Product specication
Rev. 01 — 09 November 2000
5 of 13
9397 750 07708
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS =0V
Tj =25 °C
100
130
V
Tj = 55 °C95
V
VGS(th)
gate-source threshold voltage
Tj =25 °C
234V
Tj = 150 °C
1.2
V
Tj = 55 °C
6V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
125
A
Tj = 150 °C
4
250
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
400
500
m
Tj = 150 °C
1.15
Dynamic characteristics
gfs
forward transconductance
0.5
1.2
S
Qg(tot)
total gate charge
4.6
nC
Qgs
gate-source charge
0.8
nC
Qgd
gate-drain (Miller) charge
2.1
nC
Ciss
input capacitance
138
pF
Coss
output capacitance
21
pF
Crss
reverse transfer capacitance
12
pF
td(on)
turn-on delay time
VDD =50V; RD = 100 ; VGS =10V;RG =6
6
ns
tr
rise time
13
ns
td(off)
turn-off delay time
8
ns
tf
fall time
5
ns
Source-drain (reverse) diode
VSD
0.84
1
V
trr
reverse recovery time
IS = 0.5 A; dIS/dt = 100 A/s;
VGS =0V; VDS =30V
24
ns
Qr
recovered charge
37
nC
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