參數(shù)資料
型號(hào): 934056506215
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: PLASTIC, SMD, SST3, 3 PIN
文件頁(yè)數(shù): 11/13頁(yè)
文件大?。?/td> 276K
代理商: 934056506215
Philips Semiconductors
BSH114
N-channel enhancement mode eld effect transistor
Product specication
Rev. 01 — 09 November 2000
7 of 13
9397 750 07708
Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS > ID xRDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
01
23
45
max
typ
min
V
GS
(V)
ID
(A)
03ac59
0
0.5
1
1.5
2
2.5
01
23
ID (A)
gfs
(S)
Tj = 25 C
Tj =150 C
VDS > ID X RDSon
03ac60
0
1
2
3
0
0.4
0.8
1.2
VSD (V)
IS
(A)
Tj = 25 C
Tj =150 C
VGS = 0 V
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