參數(shù)資料
型號(hào)： 934056506215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù)： 6/13頁
文件大小： 276K
代理商： 934056506215
Philips Semiconductors
BSH114
N-channel enhancement mode eld effect transistor
Product specication
Rev. 01 — 09 November 2000
2 of 13
9397 750 07708
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
100
V
ID
drain current (DC)
Tsp =25 °C; VGS =10V
0.85
A
Ptot
total power dissipation
Tsp =25 °C
0.83
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.5 A
400
500
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
100
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
100
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tsp =25 °C; VGS =10V; Figure 2 and 3
0.85
A
Tsp = 100 °C; VGS =10V; Figure 2 and 3
0.5
A
Tamb =25 °C; VGS =10V
0.5
A
Tamb = 100 °C; VGS =10V
0.3
A
IDM
peak drain current
Tsp =25 °C; tp ≤ 10 s; Figure 3
3.4
A
Ptot
total power dissipation
Tsp =25 °C; Figure 1
0.83
W
Tamb =25 °C
0.36
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain (reverse) diode
IS
source (diode forward) current (DC)
Tsp =25 °C
0.85
A
ISM
peak (diode forward) source current Tsp =25 °C; tp ≤ 10 s
3.4
A
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934056508115 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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