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參數資料
| 型號： | 934056506215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數： | 10/13頁 |
| 文件大?。?/td> | 276K |
| 代理商： | 934056506215 |
Philips Semiconductors
BSH114
N-channel enhancement mode eld effect transistor
Product specication
Rev. 01 — 09 November 2000
6 of 13
9397 750 07708
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristic: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ac56
0
1
2
3
0
0.5
1
1.5
2
VDS (V)
ID
(A)
5.8 V
5.6 V
5.4 V
5.2 V
5.0 V
4.8 V
6 V
VGS = 10 V 7 V
Tj = 25 C
03ac58
0
1
2
3
02468
VGS (V)
ID
(A)
Tj = 25 C
Tj = 150 C
VDS > ID X RDSon
03ac57
0
1
2
3
01
234
ID (A)
RDSon
(
)
5.8 V
VGS = 4.8 V
5.0 V
5.2 V
5.4 V
5.6 V
7 V
10 V
6 V
Tj = 25 C
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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