參數(shù)資料
型號: 934056506215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù): 7/13頁
文件大小: 276K
代理商: 934056506215
Philips Semiconductors
BSH114
N-channel enhancement mode eld effect transistor
Product specication
Rev. 01 — 09 November 2000
3 of 13
9397 750 07708
Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse
Fig 3.
Safe operating area; drain and peak currents as a function of drain source voltage.
03aa17
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
Tsp (
o
C)
(%)
03aa25
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
sp
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
D
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ac55
10-3
10-2
10-1
1
10
10-1
1
10
102
103
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 s
100 s
tp
T
P
t
T
δ =
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