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| 型號(hào)： | 9S12H256BDGV1 |
| 英文描述： | 9S12H256B Device Guide |
| 中文描述： | 9S12H256B設(shè)備指南 |
| 文件頁(yè)數(shù)： | 104/130頁(yè) |
| 文件大小： | 2171K |
| 代理商： | 9S12H256BDGV1 |
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MC9S12H256 Device User Guide — V01.18
104
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
The setup time can be ignored for this operation.
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
Table A-11 NVM Timing Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1
D External Oscillator Clock
f
NVMOSC
0.5
32
1
NOTES
:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency f
NVMOP
and maximum bus frequency
f
bus
.
MHz
2
D Bus frequency for Programming or Erase Operations
f
NVMBUS
1
MHz
3
D Operating Frequency
f
NVMOP
150
200
kHz
4
P Single Word Programming Time
t
swpgm
46
2
74.5
3
3. Maximum Erase and Programming times are achieved under particular combinations of f
NVMOP
and bus frequency f
bus
.
Refer to formulae in Sections
A.3.1.1 - A.3.1.4
for guidance.
4. urst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f
NVMOP
.
μ
s
5
D Flash Burst Programming consecutive word
4
t
bwpgm
20.4
2
31
3
μ
s
6
D Flash Burst Programming Time for 32 Words
4
t
brpgm
678.4
2
1035.5
3
μ
s
7
P Sector Erase Time
t
era
20
5
26.7
3
ms
8
P Mass Erase Time
t
mass
100
5
133
3
ms
t
era
4000
1
f
NVMOP
---------------------
≈
t
mass
20000
1
f
NVMOP
---------------------
≈
F
For More Information On This Product,
Go to: www.freescale.com
n
.
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