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參數(shù)資料
| 型號(hào)： | A28F200BR-B |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 2兆位（256K × 8）開機(jī)區(qū)塊快閃記憶體（2兆位（128K的× 16）引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 19/36頁(yè) |
| 文件大小： | 440K |
| 代理商： | A28F200BR-B |
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E
A28F200BR
19
ADVANCE INFORMATION
SR.7 =
0
1
Start
Write 20H,
Block Address
Write D0H and
Block Address
Full Status
Check if Desired
Block Erase
Complete
FULL STATUS CHECK PROCEDURE
1
0
Read Status Register
Data (See Above)
1
0
Read Status
Register
V
PP
Range Error
Suspend
Erase
Suspend Erase
Loop
YES
NO
1
0
Command Sequence
Error
SR.3 =
SR.5 =
SR.4,5 =
Block Erase
Error
Bus
Operation
Command
Comments
Standby
Check SR.4,5
Both 1 = Command
Sequence Error
Standby
Check SR.3
1 = V Low Detect
PP
SR.3 MUST be cleared, if set during an erase attempt, before further
attempts are allowed by the Write State Machine.
SR.5 is only cleared by the Clear Status Register Command, in
cases where multiple blocks are erase before full status is checked.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
Check SR.5
1 = Block Erase Error
Standby
Bus
Command
Comments
Write
Write
Erase Setup
Read
Data = 20H
Addr = Within Block to be Erased
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent block erasures.
Full Status Check can be done after each block erase,
or after a sequence of block erasures.
Write FFH after the last operation to reset device to read
array mode.
Status Register Data
Toggle CE# or OE#
to Update Status Register
Standby
Erase
Confirm
Data = D0H
Addr = Within Block to be Erased
Block Erase
Successful
0542_05
Figure 5. Automated Block Erase Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A28F200BR-T | 2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F200BX-B | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BR-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BR-T | 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BX-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A28F200BR-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BR-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BR-T/B |
| A28F200BR-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
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