- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378264 > A28F200BR-B (Intel Corp.) 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | A28F200BR-B |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 2兆位（256K × 8）開機(jī)區(qū)塊快閃記憶體（2兆位（128K的× 16）引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 6/36頁 |
| 文件大小： | 440K |
| 代理商： | A28F200BR-B |
第1頁第2頁第3頁第4頁第5頁當(dāng)前第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
A28F200BR
become
6
ADVANCE INFORMATION
Savings (APS) feature which minimizes system
battery current drain, allowing for very low power
designs. To provide even greater power savings,
the boot block family includes a deep power-down
mode which minimizes power consumption by
turning most of the flash memory’s circuitry off.
This mode is controlled by the RP# pin and its
usage is discussed in Section 3.5, along with other
power consumption issues.
Additionally, the RP# pin provides protection
against unwanted command writes due to invalid
system bus conditions that may occur during
system reset and power-up/down sequences.
Also, when the flash memory powers-up, it
automatically defaults to the read array mode, but
during a warm system reset, where power
continues uniterrupted to the system components,
the flash memory could remain in a non-read
mode, such as erase. Consequently, the system
Reset pin should be tied to RP# to reset the
memory to normal read mode upon activation of
the Reset pin.
The byte-wide or word-wide input/output is
controlled by the BYTE# pin. See Table 1 for a
detailed
description
of
especially the usage of the
DQ
15
/A
-1
pin.
BYTE#
operations,
The 28F200 products are available in a
ROM/EPROM-compatible pinout and housed in
the 44-lead PSOP (Plastic Small Outline)
package.
Refer to the DC Characteristics Table, Section 5.2
for complete current and voltage specifications.
Refer to the AC Characteristics
Table, Section
5.3, for read, program and erase performance
specifications.
1.3
Applications
The 2-Mbit boot block flash memory family
combines
high-density,
performance, cost-effective flash memories with
blocking and hardware protection capabilities.
Their flexibility and versatility reduce costs
throughout the product life cycle. Flash memory is
ideal for Just-In-Time production flow, reducing
system inventory and costs, and eliminating
component handling during the production phase.
low-power,
high-
When the product is in the end-user’s hands, and
updates
or
feature
enhancements
necessary or mandatory, flash memory eliminates
the need to replace an assembly. The update can
be performed as part of routine maintenance
operation
by
relatively
technicians.
unsophisticated
The reliability of such a field upgrade is enhanced
by a hardware-protected 16-Kbyte boot block. If
the protection methods are implemented in the
circuit
design,
the
unchangeable. Locating the boot-strap code in this
area assures a fail-safe recovery from an update
operation that failed to complete correctly.
boot
block
will
be
The
modification of control algorithms to reflect
changes in the process or device being controlled.
A variety of software algorithms allow these two
blocks to behave like a standard EEPROM.
two
8-Kbyte
parameter
blocks
allow
Intel’s boot block architecture provides a flexible
voltage solution for the different design needs of
various applications. The asymmetrically-blocked
memory map allows the integration of several
memory components into a single flash device.
The boot block provides a secure boot PROM; the
parameter
blocks
can
functionality for parameter store with proper
software techniques; and the main blocks provide
code and data storage with access times fast
enough to execute code in place, decreasing RAM
requirements.
emulate
EEPROM
1.4
Pinouts
Intel’s SmartVoltage boot block architecture
provides upgrade paths in every package pinout to
the 8-Mbit density. The 28F200 44-lead PSOP
pinout follows the industry standard ROM/EPROM
pinout as shown in Figure 2.
Pinouts for the corresponding 4-Mbit and 8-Mbit
components are also provided for convenient
reference. 2-Mbit pinouts are given on the chip
illustration in the center, with 2-Mbit and 8-Mbit
pinouts going outward from the center.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A28F200BR-T | 2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F200BX-B | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BR-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BR-T | 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BX-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A28F200BR-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BR-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BR-T/B |
| A28F200BR-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。