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參數(shù)資料
| 型號： | ADF4208BRUZ-RL |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 21/24頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC PLL FREQ SYNTHESIZER 20TSSOP |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 類型： | 時鐘/頻率合成器，RF |
| PLL： | 是 |
| 輸入： | CMOS，TTL |
| 輸出： | 時鐘 |
| 電路數(shù)： | 1 |
| 比率 - 輸入:輸出： | 3:1 |
| 差分 - 輸入:輸出： | 是/無 |
| 頻率 - 最大： | 2GHz |
| 除法器/乘法器： | 無/無 |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 20-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 20-TSSOP |
| 包裝： | 帶卷 (TR) |
ADF4206/ADF4208
Rev. A | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Ratings
0.3 V to +7 V
VDD1 to VDD2
0.3 V to +0.3 V
VP1, VP2 to GND
0.3 V to +7 V
VP1, VP2 to VDD1
0.3 V to +5.5 V
Digital I/O Voltage to GND
0.3 V to DVDD + 0.3 V
Analog I/O Voltage to GND
0.3 V to VP + 0.3 V
OSCIN, OSCOUT, RF1IN (A, B),
RF2IN (A, B) to GND
0.3 V to VDD + 0.3 V
RFINA to RFINB (RF1, RF2)
±320 mV
Operating Temperature Range
Industrial (B Version)
40°C to +85°C
Storage Temperature Range
65°C to +150°C
Maximum Junction Temperature
150°C
TSSOP θJA Thermal Impedance
112°C/W
LFCSP θJA Thermal Impedance
(Paddle Soldered)
30.4°C/W
Reflow Soldering
Peak Temperature (40 sec)
260°C
1 This device is a high performance RF integrated circuit with an ESD rating of
<2 kΩ and it is ESD sensitive. Proper precautions should be taken for
handling and assembly.
2 GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
TRANSISTOR COUNT
11,749 (CMOS) and 522 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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