參數(shù)資料
型號(hào)： AM29LV160MB100FI
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述： 16兆位（2米× 8位/ 1個(gè)M x 16位），3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 24/60頁(yè)
文件大?。?/td> 1849K
代理商： AM29LV160MB100FI
22
Am29LV160M
25974B0 August 11, 2003
P r e l i m i n a r y
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to Tables
10
–
11
for
command definitions). In addition, the following hardware data protection mea-
sures prevent accidental erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down
transitions, or from system noise.
Low V
CC
W rite I nhibit
When V
CC
is less than V
LKO
, the device does not accept any write cycles. This pro-
tects data during V
CC
power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets. Subsequent
writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent unintentional writes when V
CC
is
greater than V
LKO
.
W rite Pulse “ Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write
cycle.
Table 9. Primary Vendor-Specific Extended Query
Addresses
( W ord Mode)
Addresses
( Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0008h
Address Sensitive Unlock (Bit 1–0)
0b = Required, 1b = Not Required
Process Technology (Bits 7–2)
0010b = 0.23 μm MirrorBit
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
相關(guān)PDF資料
PDF描述
Am29LV160MT100 CAP 0.01UF 100V 100V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 STANDOFF
AM29LV160MT100EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT100FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT100WAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB100WAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
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