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參數(shù)資料
| 型號： | AM29LV160MB100FI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位），3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 30/60頁 |
| 文件大?。?/td> | 1849K |
| 代理商： | AM29LV160MB100FI |
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Am29LV160M
25974B0 August 11, 2003
P r e l i m i n a r y
The system must write the Erase Resume command (address bits are “don’t
care”) to exit the erase suspend mode and continue the sector erase operation.
Further writes of the Resume command are ignored. Another Erase Suspend
command can be written after the device has resumed erasing.
Notes:
1. See Tables
10
–
11
for erase command sequence.
2. See
“DQ3: Sector Erase Timer”
for more information.
Figure 5. Erase Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming
operation so that data can be read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the de-
vice halts the program operation within 15
μ
s maximum (5
μ
s typical) and
updates the status bits. Addresses are not required when writing the Program
Suspend command.
After the programming operation has been suspended, the system can read
array data from any non-suspended sector. The Program Suspend command
may also be issued during a programming operation while an erase is sus-
pended. In this case, data may be read from any addresses not in Erase
Suspend or Program Suspend. If a read is needed from the SecSi Sector area
(One-time Program area), then user must use the proper command sequences
to enter and exit this region.
The system may also write the autoselect command sequence when the device
is in the Program Suspend mode. The system can read as many autoselect
codes as required. When the device exits the autoselect mode, the device re-
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV160MT100 | CAP 0.01UF 100V 100V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 STANDOFF |
| AM29LV160MT100EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT100FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT100WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB100WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MB100PCIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 100NS 64BGA - Tape and Reel |
| AM29LV160MB-100WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 100ns 48-Pin FBGA |
| AM29LV160MB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 120ns 48-Pin TSOP |
| AM29LV160MB70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV160MB90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP |
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