參數(shù)資料
型號(hào)： AM29LV160MB100FI
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述： 16兆位（2米× 8位/ 1個(gè)M x 16位），3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 39/60頁
文件大?。?/td> 1849K
代理商： AM29LV160MB100FI
August 11, 2003 25974B0
Am29LV160M
37
P r e l i m i n a r y
change a “ 0” back to a “ 1.”
Under this condition, the device halts the opera-
tion, and when the operation has exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the reset command to return
the device to reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to de-
termine whether or not an erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If additional sectors are selected for
erasure, the entire time-out also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches from “0” to “1.” The system
may ignore DQ3 if the system can guarantee that the time between additional
sector erase commands will always be less than 50
μ
s. See also the
“Sector
Erase Command Sequence”
section.
After the sector erase command sequence is written, the system should read the
status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has ac-
cepted the command sequence, and then read DQ3. If DQ3 is “1”, the internally
controlled erase cycle has begun; all further commands (other than Erase Sus-
pend) are ignored until the erase operation is complete. If DQ3 is “0”, the device
will accept additional sector erase commands. To ensure the command has been
accepted, the system software should check the status of DQ3 prior to and fol-
lowing each subsequent sector erase command. If DQ3 is high on the second
status check, the last command might not have been accepted. Table
12
shows
the outputs for DQ3.
Table 12. Write Operation Status
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing
limits. See
“DQ5: Exceeded Timing Limits”
for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
Operation
DQ7
( Note
2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
( Note 1)
0
0
DQ3
N/A
1
DQ2
( Note 2)
No toggle
Toggle
RY/ BY#
0
0
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Program
Suspend
Mode
Program-
Suspend Read
Program-
Suspended Sector
Non-Program
Suspended Sector
Invalid (not allowed)
1
Data
1
Erase
Suspend
Mode
Reading within Erase
Suspended Sector
Reading within Non-Erase Suspended
Sector
Erase-Suspend-Program
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
相關(guān)PDF資料
PDF描述
Am29LV160MT100 CAP 0.01UF 100V 100V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 STANDOFF
AM29LV160MT100EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT100FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT100WAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB100WAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV160MB100PCIT 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 100NS 64BGA - Tape and Reel
AM29LV160MB-100WAI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 100ns 48-Pin FBGA
AM29LV160MB120EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 120ns 48-Pin TSOP
AM29LV160MB70EI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays
AM29LV160MB90EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP
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