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參數(shù)資料
| 型號(hào)： | AM29LV160MB100FI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個(gè)M x 16位），3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 54/60頁 |
| 文件大?。?/td> | 1849K |
| 代理商： | AM29LV160MB100FI |
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52
Am29LV160M
25974B0 August 11, 2003
P r e l i m i n a r y
Erase and Programming Performance
Notes:
1.
Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
Under worst case conditions of 90°C, V
CC
= 2.7 V, 100,000 cycles.
The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
2.
3.
4.
5.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Tables
2
–
3
for further information on command definitions.
The device has a minimum erase and program cycle endurance of 100,000 cycles.
6.
Latchup Characteristics
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP Pin and BGA Package Capacitance
Notes:
1.
2.
Sampled, not 100% tested.
Test conditions T
A
= 25°C, f = 1.0 MHz.
Data Retention
Parameter
Typ ( Note 1)
Max ( Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
25
s
Byte Programming Time
12
210
μs
Excludes system level overhead
(Note 5)
Word Programming Time
12
210
μs
Chip Programming Time
(Note 3)
Byte Mode
25.2
66
s
Word Mode
12.6
33
s
Description
Min
Max
Input voltage with respect to V
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+ 100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV160MT100 | CAP 0.01UF 100V 100V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 STANDOFF |
| AM29LV160MT100EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT100FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT100WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB100WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MB100PCIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 100NS 64BGA - Tape and Reel |
| AM29LV160MB-100WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 100ns 48-Pin FBGA |
| AM29LV160MB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 120ns 48-Pin TSOP |
| AM29LV160MB70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV160MB90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP |
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