- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366502 > AM29LV320DB120 (Advanced Micro Devices, Inc.) 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29LV320DB120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 13/55頁(yè) |
| 文件大?。?/td> | 1258K |
| 代理商： | AM29LV320DB120 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)
November 15, 2004
Am29LV320D
13
Automatic Sleep Mode
The automatic sleep mode minimizes Flash de-
vice energy consumption. The device automati-
cally enables this mode when addresses remain
stable for t
ACC
+ 30 ns. The automatic sleep
mode is independent of the CE#, WE#, and
OE# control signals. Standard address access
timings provide new data when addresses are
changed. While in sleep mode, output data is
latched and always available to the system. I
CC4
in the
“DC Characteristics” on page 35
table
represents the automatic sleep mode current
specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method
of resetting the device to reading array data.
When the RESET# pin is driven low for at least
a period of t
RP
, the device immediately termi-
nates any operation in progress, tristates all
output pins, and ignores all read/write com-
mands for the duration of the RESET# pulse.
The device also resets the internal state ma-
chine to reading array data. The operation that
was interrupted should be reinitiated once the
device is ready to accept another command se-
quence, to ensure data integrity.
Current is reduced for the duration of the RE-
SET# pulse. When RESET# is held at V
SS
±0.3
V, the device draws CMOS standby current
Table 2.
Top Boot Sector Addresses (Am29LV320DT) (Sheet 1 of 2)
(I
CC4
). If RESET# is held at V
IL
but not within
V
SS
±0.3 V, the standby current is greater.
The RESET# pin may be tied to the system
reset circuitry. A system reset would thus also
reset the Flash memory, enabling the system to
read the boot-up firmware from the Flash
memory.
If RESET# is asserted during a program or
erase operation, the RY/BY# pin remains a “0”
(busy) until the internal reset operation is com-
plete, which requires a time of t
READY
(during
Embedded Algorithms). The system can thus
monitor RY/BY# to determine whether the
reset operation is complete. If RESET# is as-
serted when a program or erase operation is
not executing (RY/BY# pin is “1”), the reset op-
eration is completed within a time of t
READY
(not
during Embedded Algorithms). The system can
read data t
RH
after the RESET# pin returns to
V
IH
.
Refer to the AC Characteristics tables for RE-
SET# parameters and to
Figure 15, on page 39
for the timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the
device is disabled. The output pins are placed in
the high impedance state.
Sector
Sector Address
A20–A12
000000xxx
000001xxx
000010xxx
000011xxx
000100xxx
000101xxx
000110xxx
000111xxx
001000xxx
001001xxx
001010xxx
001011xxx
001100xxx
001101xxx
001110xxx
001111xxx
010000xxx
010001xxx
010010xxx
Sector Size
(Kbytes/Kwords)
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
(x8)
Address Range
000000h–00FFFFh
010000h–01FFFFh
020000h–02FFFFh
030000h–03FFFFh
040000h–04FFFFh
050000h–05FFFFh
060000h–06FFFFh
070000h–07FFFFh
080000h–08FFFFh
090000h–09FFFFh
0A0000h–0AFFFFh
0B0000h–0BFFFFh
0C0000h–0CFFFFh
0D0000h–0DFFFFh
0E0000h–0EFFFFh
0F0000h–0FFFFFh
100000h–10FFFFh
110000h–11FFFFh
120000h–12FFFFh
(x16)
Address Range
000000h–07FFFh
008000h–0FFFFh
010000h–17FFFh
018000h–01FFFFh
020000h–027FFFh
028000h–02FFFFh
030000h–037FFFh
038000h–03FFFFh
040000h–047FFFh
048000h–04FFFFh
050000h–057FFFh
058000h–05FFFFh
060000h–067FFFh
068000h–06FFFFh
070000h–077FFFh
078000h–07FFFFh
080000h–087FFFh
088000h–08FFFFh
090000h–097FFFh
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV320DB90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB90R | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DT120 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DT90R | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| Am29LV320DT90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
| AM29LV320DB90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB90ED | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB90EF | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。