參數(shù)資料
型號: AM29LV320DB120
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 28/55頁
文件大?。?/td> 1258K
代理商: AM29LV320DB120
28
Am29LV320D
November 15, 2004
time-out period resets the device to the
read mode.
The system must rewrite the com-
mand sequence and any additional addresses
and commands.
The system can monitor DQ3 to determine if
the sector erase timer timed out (See the sec-
tion
“DQ3: Sector Erase Timer” on page 32
.).
The time-out begins from the rising edge of the
final WE# pulse in the command sequence.
When the Embedded Erase algorithm is com-
plete, the device returns to reading array data
and addresses are no longer latched. The sys-
tem can determine the status of the erase op-
eration by reading DQ7, DQ6, DQ2, or RY/BY#
in the erasing sector. Refer to
“Write Operation
Status” on page 30
for information on these
status bits.
Once the sector erase operation begins, only
the Erase Suspend command is valid. All other
commands are ignored. However, note that a
hardware reset
immediately
terminates the
erase operation. If that occurs, the sector erase
command sequence should be reinitiated once
the device returns to reading array data, to en-
sure data integrity.
Figure 5, on page 28
illustrates the algorithm
for the erase operation. Refer to table
“Erase
and Program Operations” on page 41
for pa-
rameters, and
Figure 19, on page 43
for timing
diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the
system to interrupt a sector erase operation
and then read data from, or program data to,
any sector not selected for erasure. This com-
mand is valid only during the sector erase oper-
ation, including the 50 μs time-out period
during the sector erase command sequence.
The Erase Suspend command is ignored if writ-
ten during the chip erase operation or Embed-
ded Program algorithm.
When the Erase Suspend command is written
during the sector erase operation, the device
requires a maximum of 20 μs to suspend the
erase operation. However, when the Erase Sus-
pend command is written during the sector
erase time-out, the device immediately termi-
nates the time-out period and suspends the
erase operation.
After the erase operation is suspended, the de-
vice enters the erase-suspend-read mode. The
system can read data from or program data to
any sector not selected for erasure. (The device
“erase suspends” all sectors selected for era-
sure.) Reading at any address within erase-sus-
pended sectors produces status information on
DQ7–DQ0. The system can use DQ7, or DQ6
and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to
the
“Write Operation Status” on page 30
sec-
tion for information on these status bits.
After an erase-suspended program operation is
complete, the device returns to the erase-sus-
pend-read mode. The system can determine
the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard
Byte Program operation. Refer to
“Write Opera-
tion Status” on page 30
for more information.
In the erase-suspend-read mode, the system
can also issue the autoselect command se-
quence. Refer to
“Autoselect Mode” on page 16
and
“Autoselect Command Sequence” on
page 25
for details.
To resume the sector erase operation, the sys-
tem must write the Erase Resume command.
Further writes of the Resume command are ig-
nored. Another Erase Suspend command can
be written after the chip resumes erasing.
Figure 5.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See
Table 14, on page 29
for erase command
sequence.
2. See the section on DQ3 for information on the
sector erase timer.
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