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參數(shù)資料
| 型號(hào)： | AM29LV320DB120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 21/55頁 |
| 文件大?。?/td> | 1258K |
| 代理商： | AM29LV320DB120 |
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November 15, 2004
Am29LV320D
21
Once the SecSi Sector is locked and verified,
the system must write the Exit SecSi Sector
Region command sequence to return to reading
and writing the remainder of the array.
The SecSi Sector protection must be used with
caution since, once protected, there is no pro-
cedure available for unprotecting the SecSi
Sector area and none of the bits in the SecSi
Sector memory space can be modified in any
way.
Figure 3.
SecSi Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock
cycles for programming or erasing provides
data protection against inadvertent writes (re-
fer to
Table 14, on page 29
for command defi-
nitions). In addition, the following hardware
data protection measures prevent accidental
erasure or programming, which might other-
wise be caused by spurious system level signals
during V
CC
power-up and power-down transi-
tions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not
accept any write cycles. This protects data dur-
ing V
CC
power-up and power-down. The com-
mand register and all internal program/erase
circuits are disabled, and the device resets to
the read mode. Subsequent writes are ignored
until V
CC
is greater than V
LKO
. The system must
provide the proper signals to the control pins to
prevent unintentional writes when V
CC
is
greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of
OE# = V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate
a write cycle, CE# and WE# must be a logical
zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during
power up, the device does not accept com-
mands on the rising edge of WE#. The internal
state machine is automatically reset to the read
mode on power-up.
COMMON FLASH MEMORY
INTERFACE (CFI)
The Common Flash Interface (CFI) specification
outlines device and host system software inter-
rogation handshake, which allows specific ven-
dor-specified software algorithms to be used
for entire families of devices. Software support
can then be device-independent, JEDEC ID-in-
dependent, and forward- and backward-com-
patible for the specified flash device families.
Flash vendors can standardize their existing in-
terfaces for long-term compatibility.
This device enters the CFI Query mode when
the system writes the CFI Query command,
98h, to address 55h in word mode (or address
AAh in byte mode), any time the device is
ready to read array data. The system can read
CFI information at the addresses given in
Table 9, on page 22
through
Table 12, on
page 24
. To terminate reading CFI data, the
system must write the reset command.
The system can also write the CFI query com-
mand when the device is in the autoselect
mode. The device enters the CFI query mode,
and the system can read CFI data at the ad-
dresses given in
Table 9, on page 22
through
Table 12, on page 24
. The system must write
the reset command to return the device to the
reading array data.
For further information, please refer to the CFI
Specification and CFI Publication 100, available
via
the
World
http://www.amd.com/flash/cfi. Alternatively,
contact an AMD representative for copies of
these documents.
Wide
Web
at
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
START
RESET# =
V
IH
or V
ID
Wait 1
μ
s
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Remove V
or V
ID
from RESET#
Write reset
command
SecSi Sector
Protect Verify
complete
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相關(guān)代理商/技術(shù)參數(shù) |
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| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
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| AM29LV320DB90ED | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
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