參數(shù)資料
型號： AM29LV800DB-120WCC
廠商： Advanced Micro Devices, Inc.
英文描述： Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù)： 14/51頁
文件大?。?/td> 1628K
代理商： AM29LV800DB-120WCC
12
Am29LV800D
Am29LV800D_00_A4_E January 21, 2005
P R E L I M I N A R Y
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains a “0” (busy)
until the internal reset operation is complete,
which requires a time of t
READY
(during
Embedded Algorithms). The system can thus
monitor RY/BY# to determine whether the reset
operation is complete. If RESET# is asserted
when a program or erase operation is not exe-
cuting (RY/BY# pin is “1”), the reset operation
is completed within a time of t
READY
(not during
Embedded Algorithms). The system can read
data t
RH
after the RESET# pin returns to V
IH
.
Refer to the AC Characteristics tables for
RESET# parameters and to Figure 1 for the
timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the
device is disabled. The output pins are placed in
the high impedance state.
Table 2. Am29LV800DT Top Boot Block Sector Addresses
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
A18
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
A17
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
A16
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
A15
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
A14
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
1
1
A13
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
1
A12
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
X
Sector Size
(Kbytes/
Kwords)
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
8/4
16/8
Address Range (in hexadecimal)
(x8)
Address Range
00000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
80000h–8FFFFh
90000h–9FFFFh
A0000h–AFFFFh
B0000h–BFFFFh
C0000h–CFFFFh
D0000h–DFFFFh
E0000h–EFFFFh
F0000h–F7FFFh
F8000h–F9FFFh
FA000h–FBFFFh
FC000h–FFFFFh
(x16)
Address Range
00000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7BFFFh
7C000h–7CFFFh
7D000h–7DFFFh
7E000h–7FFFFh
相關PDF資料
PDF描述
AM29LV800DT-90WCF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
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AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
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