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參數(shù)資料
| 型號： | AM29LV800DB-120WCC |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 51/51頁 |
| 文件大?。?/td> | 1628K |
| 代理商： | AM29LV800DB-120WCC |
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Am29LV800D
Am29LV800D_00_A4_E January 21, 2005
P R E L I M I N A R Y
Revision Summary
Revision A (January 19, 2004)
Changed data sheet status to Advance Informa-
tion to indicate new 0.23 μm process tech-
nology. The base device part number has
changed from Am29LV800B to Am29LV800D.
Specifications for I
CC1
, t
WHWH1
, t
WHWH2
have
changed. Extended temperature is no longer
available. All other specifications in the data
sheet remain unchanged. Deleted references to
KGD option in Connection Diagrams section.
(This document was formerly released as publi-
cation 21490, revision H.)
Revision A+1 (February 3, 2004)
Distinctive Characteristics, General Description,
Ordering Information
Deleted references to KGD option. (This docu-
ment was formerly released as publication
21490, revision H1.)
Revision A+2 (April 2, 2004)
General Description
Removed unlock bypass section.
Global
Converted datasheet to Preliminary.
Ordering Information
Added Pb-Free packages and updated Valid
Combinations tables to include changes.
Absolute Maximum Rating
Changed ambient with power applied from
125
°
C to 85
°
C.
Revision A+3 (June 23, 2004)
Global change
Changed all Helvetica/Times Roman fonts to Gill
Sans For AMD or Verdana.
“Physical Dimensions” on page 47
Added VBK048 Package Drawing.
“Ordering Information” on page 8
Added “WC =...” to Standard Products table.
Added “WCC, WCI, WCD, WCF” to Valid combi-
nations table.
Added Colophon.
Revision A+4 (January 21, 2005)
Added migration statement.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that FASL will not be liable to you
and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices
have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures
into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating condi-
tions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Ex-
change and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior
authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright 2000–2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV800DT-90WCF | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800DT-90WCI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800DT-120ED | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| AM29N323D | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29N323DT11AWKI | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800DB-70EF | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP |
| AM29LV800DB-90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
| AM29LV800DB-90ED | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
| AM29LV800DB90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800DB-90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
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