參數(shù)資料
型號： AM29LV800DB-120WCC
廠商： Advanced Micro Devices, Inc.
英文描述： Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù)： 18/51頁
文件大?。?/td> 1628K
代理商： AM29LV800DB-120WCC
16
Am29LV800D
Am29LV800D_00_A4_E January 21, 2005
P R E L I M I N A R Y
Figure 2. In-System Sector Protect/
Sector Unprotect Algorithms
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Set up sector
address
Wait 150 s
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
START
PLSCNT = 1
RESET# = V
ID
Wait 1 ms
First Write
Cycle = 60h
Data = 01h
Remove V
from RESET#
Write reset
command
Sector Protect
complete
Yes
Yes
No
PLSCNT
= 25
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Set up first sector
address
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
START
PLSCNT = 1
RESET# = V
ID
Wait 1 ms
Data = 00h
Last sector
verified
Remove V
from RESET#
Write reset
command
Sector Unprotect
complete
Yes
No
PLSCNT
= 1000
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No
All sectors
protected
Yes
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
Set up
next sector
address
No
Yes
No
Yes
No
No
Yes
No
Sector Protect
Algorithm
Sector Unprotect
Algorithm
First Write
Cycle = 60h
Protect another
sector
Reset
PLSCNT = 1
相關PDF資料
PDF描述
AM29LV800DT-90WCF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-90WCI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
AM29N323D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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相關代理商/技術參數(shù)
參數(shù)描述
AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
AM29LV800DB-90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB-90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV800DB-90EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
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