參數(shù)資料
型號(hào)： AM29LV800DB-120WCC
廠商： Advanced Micro Devices, Inc.
英文描述： Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 23/51頁
文件大小： 1628K
代理商： AM29LV800DB-120WCC
January 21, 2005 Am29LV800D_00_A4_E
Am29LV800D
21
P R E L I M I N A R Y
Notes:
1. See Table 5 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 1. Erase Operation
Table 5. Am29LV800D Command Definitions
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Command
Sequence
(Note 1)
Bus Cycles (Notes 2-5)
Third
Addr
Data
First
Second
Addr
Fourth
Addr
Fifth
Sixth
Addr
RA
XXX
555
AAA
555
AAA
555
AAA
Data
RD
F0
Data
Data
Addr Data
Addr
Data
Read (Note 6)
Reset (Note 7)
1
1
Manufacturer ID
Word
Byte
Word
Byte
Word
Byte
4
AA
2AA
555
2AA
555
2AA
555
55
555
AAA
555
AAA
555
AAA
90
X00
01
Device ID,
Top Boot Block
4
AA
55
90
X01
X02
X01
X02
(SA)
X02
22DA
DA
225B
5B
XX00
XX01
00
01
Device ID,
Bottom Boot Block
4
AA
55
90
Sector Protect Verify
(Note 9)
Word
4
555
AA
2AA
55
555
90
Byte
AAA
555
AAA
(SA)
X04
Program
Word
Byte
Word
Byte
4
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
555
AAA
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program (Note
10)
Unlock Bypass Reset (Note
11)
2
XXX
A0
PA
PD
2
XXX
90
XXX
00
C
A
相關(guān)PDF資料
PDF描述
AM29LV800DT-90WCF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-90WCI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
AM29N323D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29N323DT11AWKI 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
AM29LV800DB-90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB-90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV800DB-90EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
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