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參數(shù)資料
| 型號： | APTM100U13SG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 285K |
| 代理商： | APTM100U13SG |
APTM100U13S
A
P
T
M
100U
13S
–
R
ev
2
J
ul
y,
2005
APT website – http://www.advancedpower.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS= 1000V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
400
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 32.5A
130
145
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
26.4
31.6
Coss
Output Capacitance
2.38
3.32
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
1.16
1.72
nF
Qg
Total gate Charge
1340 2000
Qgs
Gate – Source Charge
116
180
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 65A
660
1000
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
125
Tf
Fall Time
Inductive Switching @ 25°C
VGS = 15V
VBus = 667V
ID = 65A
RG = 1.5
40
ns
Eon
Turn-on Switching Energy
2.6
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 1.5
1.6
J
Eon
Turn-on Switching Energy
4.2
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 1.5
1.82
J
RthJC
Junction to Case
0.1
°C/W
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
600
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
120
A
IF = 120A
1.1
1.15
IF = 240A
1.4
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
Tj = 125°C
60
ns
Tj = 25°C
120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
500
nC
RthJC
Junction to Case
0.46
°C/W
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