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參數(shù)資料
| 型號： | APTM100U13SG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 285K |
| 代理商： | APTM100U13SG |
APTM100U13S
A
P
T
M
100U
13S
–
R
ev
2
J
ul
y,
2005
APT website – http://www.advancedpower.com
3 – 5
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1000
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1000V
Tj = 125°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 40°C
100
A
IF = 100A
1.9
2.5
IF = 200A
2.2
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.7
V
Tj = 25°C
300
trr
Reverse Recovery Time
Tj = 125°C
360
ns
Tj = 25°C
800
Qrr
Reverse Recovery Charge
IF = 100A
VR = 667V
di/dt = 200A/s
Tj = 125°C
4050
nC
RthJC
Junction to Case
0.6
°C/W
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
M4
1.2
Torque Mounting torque
M6
3
5
N.m
Wt
Package Weight
400
g
J3 Package outline (dimensions in mm)
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