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參數(shù)資料
| 型號： | APTM100U13SG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 285K |
| 代理商： | APTM100U13SG |
APTM100U13S
A
P
T
M
100U
13S
–
R
ev
2
J
ul
y,
2005
APT website – http://www.advancedpower.com
5 – 5
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0
255075 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
D
ra
in
to
S
ourc
e
B
re
ak
dow
n
Vo
lt
a
g
e(
N
o
rma
liz
e
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
D
rai
n
t
o
S
o
u
rce
ON
r
e
si
st
an
ce
(N
o
rm
a
liz
e
d
)
VGS=10V
ID=32.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
255075 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Th
re
sh
o
ld
V
o
lt
a
g
e
(N
orm
al
iz
ed)
Ciss
Crss
Coss
100
1000
10000
100000
0.01
0.1
1
10
100
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
p
F)
Capacitance vs Drain to Source Voltage
VDS=200V
VDS=500V
VDS=800V
0
2
4
6
8
10
12
14
16
18
0
500
1000
1500
2000
Gate Charge (nC)
V
GS
,G
a
te
t
o
S
o
u
rc
eV
o
lt
ag
e(
V
)
Gate Charge vs Gate to Source Voltage
ID=65A
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
eve
rs
e
D
ra
in
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
Operating Frequency vs Drain Current
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10
20
30
40
50
60
ID, Drain Current (A)
Fre
q
u
enc
y(
kH
z)
VDS=667V
D=50%
RG=1.5
TJ=125°C
TC=75°C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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