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參數(shù)資料
| 型號： | APTM100UM45DAG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 215 A, 1000 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 5 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 240K |
| 代理商： | APTM100UM45DAG |
APTM100UM45DAG
APT
M
100UM
45DAG
–
Rev
3
M
ay,
2008
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS= 1000V
Tj = 25°C
600
A
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
3
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 107.5A
45
52
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 30mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±600
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
42.7
Coss
Output Capacitance
7.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
1.3
nF
Qg
Total gate Charge
1602
Qgs
Gate – Source Charge
204
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 215A
1038
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
14
Td(off)
Turn-off Delay Time
140
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 215A
RG = 0.5Ω
55
ns
Eon
Turn-on Switching Energy
7.2
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5
4.3
mJ
Eon
Turn-on Switching Energy
12
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5
5.8
mJ
Series diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
Tj = 25°C
600
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
2000
A
IF
DC Forward Current
Tj = 80°C
360
A
IF = 360A
2.5
3
IF = 720A
3
VF
Diode Forward Voltage
IF = 360A
Tj = 125°C
1.8
V
Tj = 25°C
265
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
3.3
Qrr
Reverse Recovery Charge
IF = 360A
VR = 800V
di/dt = 1200A/s
Tj = 125°C
17.3
C
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