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參數(shù)資料
| 型號(hào)： | APTM100UM45DAG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 215 A, 1000 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 5 PIN |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大小： | 240K |
| 代理商： | APTM100UM45DAG |
APTM100UM45DAG
APT
M
100UM
45DAG
–
Rev
3
M
ay,
2008
www.microsemi.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
30
60
90
120
150
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
t d(
on)
a
nd
t
d(
of
f)
(ns)
VDS=670V
RG=0.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
t r
and
t
f(ns
)
VDS=670V
RG=0.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
4
8
12
16
20
24
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
erg
y
(
m
J)
VDS=670V
RG=0.5
TJ=125°C
L=100H
Eon
Eoff
0
6
12
18
24
30
36
01
234
56
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
erg
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=670V
ID=215A
TJ=125°C
L=100H
Hard
switching
ZCS
0
200
400
600
800
20
50
80
110
140
170
200
ID, Drain Current (A)
F
req
uen
cy
(kHz)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=0.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Reverse
Drai
n
Curren
t(A)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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